Gerätedetails

Separation of silicon, ceramic or glass substrates by friction sawing as well as geometrical structuring of substrates (v-groove)

• Wafer thickness: 10-5000 µm
• Wafer size: up to 6“ (circular or rectangular)
• Rotation speed of the sawing blade: (10000…40000) RPM
• Available adapters: (48, 52, 53, 54) mm
• Sawing blade: throwless or throw-type
• Accuracy horizontal: 1 µm
• Accuracy in height: (5…10) µm
• Accuracy angle: 0,01°